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2. Band convergence and carrier-density fine-tuning as the electronic origin of high-average thermoelectric performance in Pb-doped GeTe-based alloys. Issue 22 (29th May 2020)

4. Boron‐Mediated Grain Boundary Engineering Enables Simultaneous Improvement of Thermoelectric and Mechanical Properties in N‐Type Bi2Te3. Issue 42 (19th September 2021)

8. Grain Boundary Complexions Enable a Simultaneous Optimization of Electron and Phonon Transport Leading to High‐Performance GeTe Thermoelectric Devices. Issue 3 (27th November 2022)