1. Excellent Roff/Ron ratio and short programming time in Cu/Al2O3‐based conductive‐bridging RAM under low‐current (10 μA) operation. Issue 2 (10th September 2015) Authors: Belmonte, Attilio; Fantini, Andrea; Redolfi, Augusto; Houssa, Michel; Jurczak, Malgorzata; Goux, Ludovic Journal: Physica status solidi Issue: Volume 213:Issue 2(2016:Feb.) Page Start: 302 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Hydrogen induced dipole at the Pt/oxide interface in MOS devices. Issue 2 (28th September 2015) Authors: Kolomiiets, Nadiia M.; Afanas'ev, Valeri V.; Opsomer, Karl; Houssa, Michel; Stesmans, Andre Journal: Physica status solidi Issue: Volume 213:Issue 2(2016:Feb.) Page Start: 260 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗