Excellent Roff/Ron ratio and short programming time in Cu/Al2O3‐based conductive‐bridging RAM under low‐current (10 μA) operation. Issue 2 (10th September 2015)

• Record Type: Journal Article
• Authors: Belmonte, Attilio; Fantini, Andrea; Redolfi, Augusto; Houssa, Michel; Jurczak, Malgorzata; Goux, Ludovic
• Is Part Of: Physica status solidi. Volume 213:Issue 2(2016:Feb.)
• Page Start: 302
• Page End: 305
• Publication Date: 2015-09-10
• Subjects: conductive bridging RAM -- data retention -- memory -- RRAM; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201532409
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : In this work, we prove that, for a current regime of 10 μA and using industry‐relevant programming pulse‐width, Cu/Al2 O3 ‐based conductive‐bridging RAM (CBRAM) cells ensure reliably larger memory window (MW) than state‐of‐the‐art oxygen‐vacancy‐based RRAM (OxRRAM) cells. Due to the intrinsically stochastic nature of the switching mechanism, the R on and R off values can be widely distributed, especially in a low‐current regime, drastically reducing the overall memory window. For this reason, in this study we adopt a statistical approach, focusing on the tails of the distributions. Using a program‐verify method we show that the larger median MW in CBRAM allows to program a MW ≥×10 using ×10 shorter programming time with respect to OxRRAM. Moreover, we show that, in order to ensure a MW >×10 after a fixed retention time, the programming time needs to be several decades larger for OxRRAM than for CBRAM.