1. 5.0 kV breakdown-voltage vertical GaN p–n junction diodes. (23rd February 2018) Authors: Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi Journal: Japanese journal of applied physics Issue: Volume 57:Number 4(2018)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of step-velocity-dependent concentration of magnesium in GaN based on Burton−Cabrera−Frank theory and step-edge segregation model. (2nd December 2021) Authors: Mochizuki, Kazuhiro; Kaneda, Naoki; Hayashi, Kentaro; Ohta, Hiroshi; Horikiri, Fumimasa; Mishima, Tomoyoshi Journal: Japanese journal of applied physics Issue: Volume 60:Number 12(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Breakdown phenomenon dependences on the number and positions of threading dislocations in vertical p-n junction GaN diodes. (12th February 2021) Authors: Ohta, Hiroshi; Asai, Naomi; Horikiri, Fumimasa; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi Journal: Japanese journal of applied physics Issue: Volume 60:Number SB(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy. (1st January 2023) Authors: Imabayashi, Hiroki; Yasui, Yuto; Horikiri, Fumimasa; Narita, Yoshinobu; Fukuhara, Noboru; Mishima, Tomoyoshi; Shiojima, Kenji Journal: Japanese journal of applied physics Issue: Volume 62:Number SA(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates. Issue 4 (27th November 2019) Authors: Shiojima, Kenji; Horikiri, Fumimasa; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi Other Names: Shadi Shahedipour-Sandvik F. guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 257:Issue 4(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82– ions. (31st May 2019) Authors: Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Yoshida, Takehiro; Sato, Taketomo Journal: Applied physics express Issue: Volume 12:Number 6(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy. (16th March 2018) Authors: Fujikura, Hajime; Hayashi, Kentaro; Horikiri, Fumimasa; Narita, Yoshinobu; Konno, Taichiro; Yoshida, Takehiro; Ohta, Hiroshi; Mishima, Tomoyoshi Journal: Applied physics express Issue: Volume 11:Number 4(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Estimation of Shockley–Read–Hall Lifetime in Homoepitaxial n‐GaN on Low‐Dislocation‐Density GaN Substrates Prepared by Hydride Vapor Phase Epitaxy and Maskless 3D. Issue 2 (27th July 2021) Authors: Mochizuki, Kazuhiro; Ohta, Hiroshi; Horikiri, Fumimasa; Mishima, Tomoyoshi Journal: Physica status solidi Issue: Volume 259:Issue 2(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride. (10th August 2018) Authors: Horikiri, Fumimasa; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi Journal: Applied physics express Issue: Volume 11:Number 9(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates. (21st July 2017) Authors: Fujikura, Hajime; Konno, Taichiro; Yoshida, Takehiro; Horikiri, Fumimasa Journal: Japanese journal of applied physics Issue: Volume 56:Number 8(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗