Author/Creator: Hong, TaeHyun - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Hong, TaeHyun

1. Exploration of Chemical Composition of In–Ga–Zn–O System via PEALD Technique for Optimal Physical and Electrical Properties. (7th February 2023)

Authors:: Hong, TaeHyun; Kim, Yoon‐Seo; Choi, Su‐Hwan; Lim, Jun Hyung; Park, Jin‐Seong
Journal:: Advanced Electronic Materials
Issue:: Volume 9:Number 4(2023)
Page Start:: n/a
Record Type:: Journal Article
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2. Plasma Enhanced atomic layer deposited amorphous gallium oxide thin films using novel trimethyl[N-(2-methoxyethyl)-2-methylpropan-2-amine]gallium. Issue 2 (15th January 2021)

Authors:: Hong, TaeHyun; Choi, Wan-Ho; Choi, Su-Hwan; Lee, HyunKyung; Seok, Jang Hyeon; Park, Jung Woo; Lim, Jun Hyung; Park, Jin-Seong
Journal:: Ceramics international
Issue:: Volume 47:Issue 2(2021)
Page Start:: 1588
Record Type:: Journal Article
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3. Plasma-enhanced atomic-layer-deposited indium oxide thin film using a DMION precursor within a wide process window. Issue 19 (1st October 2022)

Authors:: Choi, Su-Hwan; Hong, TaeHyun; Ryu, Seong-Hwan; Park, Jin-Seong
Journal:: Ceramics international
Issue:: Volume 48:Issue 19(2022)Part A
Page Start:: 27807
Record Type:: Journal Article
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4. Remarkable Stability Improvement with a High‐Performance PEALD‐IZO/IGZO Top‐Gate Thin‐Film Transistor via Modulating Dual‐Channel Effects. Issue 16 (29th April 2022)

Authors:: Kim, Yoon‐Seo; Lee, Won‐Bum; Oh, Hye‐Jin; Hong, TaeHyun; Park, Jin‐Seong
Journal:: Advanced materials interfaces
Issue:: Volume 9:Issue 16(2022)
Page Start:: n/a
Record Type:: Journal Article
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5. Review of recent advances in flexible oxide semiconductor thin-film transistors. Issue 4 (2nd October 2017)

Authors:: Sheng, Jiazhen; Jeong, Hyun-Jun; Han, Ki-Lim; Hong, TaeHyun; Park, Jin-Seong
Journal:: Journal of information display
Issue:: Volume 18:Issue 4(2017)
Page Start:: 159
Record Type:: Journal Article
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6. Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes *Project supported by the National Research Foundation of Korea (NRF) (No. NRF-2017R1D1A1B03034035), the Ministry of Trade, Industry & Energy (No. #10051403), and the Korea Semiconductor Research Consortium. (January 2018)

Authors:: Sheng, Jiazhen; Han, Ki-Lim; Hong, TaeHyun; Choi, Wan-Ho; Park, Jin-Seong
Journal:: Journal of semiconductors
Issue:: Volume 39:Number 1(2018:Jan.)
Page Start:
Record Type:: Journal Article
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