1. Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment. (3rd April 2019) Authors: Sun, Chi; Hao, Ronghui; Xu, Ning; He, Tao; Shi, Fengfeng; Yu, Guohao; Song, Liang; Huang, Zengli; Huang, Rong; Zhao, Yanfei; Wang, Rongxin; Cai, Yong; Zhang, Baoshun Journal: Applied physics express Issue: Volume 12:Number 5(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗