1. Band alignment in ZrSiO4/ZnO heterojunctions. (March 2016) Authors: Hays, David C.; Gila, B.P.; Pearton, S.J.; Kim, Byung-Jae; Ren, F. Journal: Vacuum Issue: Volume 125(2016) Page Start: 113 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Band alignment in ZrSiO4/ZnO heterojunctions. (March 2016) Authors: Hays, David C.; Gila, B.P.; Pearton, S.J.; Kim, Byung-Jae; Ren, F. Journal: Vacuum Issue: Volume 125(2016) Page Start: 113 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Band alignment of Al2O3 with (−201) β-Ga2O3. (August 2017) Authors: Carey, Patrick H.; Ren, F.; Hays, David C.; Gila, B.P.; Pearton, S.J.; Jang, Soohwan; Kuramata, Akito Journal: Vacuum Issue: Volume 142(2017) Page Start: 52 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Band alignment of atomic layer deposited SiO2 and HfSiO4 with β-Ga2O3. (14th June 2017) Authors: Carey, Patrick H.; Ren, Fan; Hays, David C.; Gila, Brent P.; Pearton, Stephen J.; Jang, Soohwan; Kuramata, Akito Journal: Japanese journal of applied physics Issue: Volume 56:Number 7(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3. (15th September 2018) Authors: Fares, Chaker; Ren, F.; Lambers, Eric; Hays, David C.; Gila, B. P.; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 10(2018) Page Start: P519 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3. (1st January 2018) Authors: Fares, Chaker; Ren, F.; Lambers, Eric; Hays, David C.; Gila, B. P.; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 10(2018) Page Start: P519 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions. (February 2017) Authors: Hays, David C.; Gila, B.P.; Pearton, S.J.; Thorpe, Ryan; Ren, F. Journal: Vacuum Issue: Volume 136(2017) Page Start: 137 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3. (1st January 2019) Authors: Fares, Chaker; Ren, F.; Hays, David C.; Gila, B. P.; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 7(2019) Page Start: Q3001 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3. (5th December 2018) Authors: Fares, Chaker; Ren, F.; Hays, David C.; Gila, B. P.; Pearton, S. J. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 7(2019) Page Start: Q3001 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Valence and conduction band offsets in AZO/Ga2O3 heterostructures. (July 2017) Authors: Carey, Patrick H.; Ren, F.; Hays, David C.; Gila, B.P.; Pearton, S.J.; Jang, Soohwan; Kuramata, Akito Journal: Vacuum Issue: Volume 141(2017) Page Start: 103 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗