Author/Creator: Hartmann, J M - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Hartmann, J M

1. A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained Si:P. (31st August 2017)

Authors:: Hartmann, J M; Veillerot, M; Prévitali, B
Journal:: Semiconductor science and technology
Issue:: Volume 32:Number 10(2017:Oct.)
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Record Type:: Journal Article
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2. Growth and structural properties of step-graded, high Sn content GeSn layers on Ge. (24th August 2017)

Authors:: Aubin, J; Hartmann, J M; Gassenq, A; Rouviere, J L; Robin, E; Delaye, V; Cooper, D; Mollard, N; Reboud, V; Calvo, V
Journal:: Semiconductor science and technology
Issue:: Volume 32:Number 9(2017:Sep.)
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Record Type:: Journal Article
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3. HCl + GeH4 etching for the low temperature cyclic deposition/etch of Si, Si:P, tensile-Si:P and SiGe(:B). (2nd December 2019)

Authors:: Hartmann, J M; Veillerot, M
Journal:: Semiconductor science and technology
Issue:: Volume 35:Number 1(2020)
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Record Type:: Journal Article
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4. Impact of Si precursor mixing on the low temperature growth kinetics of Si and SiGe. (29th August 2018)

Authors:: Hartmann, J M
Journal:: Semiconductor science and technology
Issue:: Volume 33:Number 10(2018:Oct.)
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Record Type:: Journal Article
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5. SiGe nano-heteroepitaxy on Si and SiGe nano-pillars. (4th May 2018)

Authors:: Mastari, M; Charles, M; Bogumilowicz, Y; Thai, Q M; Pimenta-Barros, P; Argoud, M; Papon, A M; Gergaud, P; Landru, D; Kim, Y; Hartmann, J M
Journal:: Nanotechnology
Issue:: Volume 29:Number 27(2018)
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Record Type:: Journal Article
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6. Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors. (18th May 2021)

Authors:: Eustache, E; Mahjoub, M A; Guerfi, Y; Labau, S; Aubin, J; Hartmann, J M; Bassani, F; David, S; Salem, B
Journal:: Semiconductor science and technology
Issue:: Volume 36:Number 6(2021)
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Record Type:: Journal Article
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7. Very low temperature (450 °C) selective epitaxial growth of heavily in situ boron-doped SiGe layers. (5th October 2015)

Authors:: Aubin, J; Hartmann, J M; Veillerot, M; Essa, Z; Sermage, B
Journal:: Semiconductor science and technology
Issue:: Volume 30:Number 11(2015:Nov.)
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Record Type:: Journal Article
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