SiGe nano-heteroepitaxy on Si and SiGe nano-pillars. (4th May 2018)

• Record Type: Journal Article
• Authors: Mastari, M; Charles, M; Bogumilowicz, Y; Thai, Q M; Pimenta-Barros, P; Argoud, M; Papon, A M; Gergaud, P; Landru, D; Kim, Y; Hartmann, J M
• Is Part Of: Nanotechnology. Volume 29:Number 27(2018)
• Publication Date: 2018-05-04
• Subjects: nano-heteroepitaxy -- reduced pressure—chemical vapour deposition -- selective growth -- patterned substrate -- elastic relaxation -- SiGe -- crystal defects; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aabdca
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure—chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterised by atomic force microscopy, x-ray diffraction and transmission electron microscopy. Smooth SiGe surfaces and full strain relaxation were obtained in the 650 °C–700 °C range for 2D SiGe layers grown either on Si or SiGe nano-pillars.