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2. Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth. Issue 9 (17th February 2021)

7. Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer. Issue 4 (26th February 2020)

8. Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer. Issue 4 (9th April 2020)

10. Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method. Issue 4 (30th December 2019)