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Author/Creator Hao, Ronghui

1. 10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current. Issue 13 (1st June 2018)

Authors:
Hao, Ronghui; Wu, Dongdong; Fu, Kai; Song, Liang; Chen, Fu; Zhao, Jie; Du, Zhongkai; Zhang, Bingliang; Wang, Qilong; Yu, Guohao; Cheng, Kai; Cai, Yong; Zhang, Xinping; Zhang, Baoshun
Journal:
Electronics letters
Issue:
Volume 54:Issue 13(2018)
Page Start:
848
Record Type:
Journal Article
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2. Architecture Design and Catalytic Activity: Non‐Noble Bimetallic CoFe/fe3O4 Core–Shell Structures for CO2 Hydrogenation. Issue 5 (18th December 2022)

Authors:
Miao, Wenkang; Hao, Ronghui; Wang, Jingzhou; Wang, Zihan; Lin, Wenxin; Liu, Heguang; Feng, Zhenjie; Lyu, Yingchun; Li, Qianqian; Jia, Dongling; Ouyang, Runhai; Cheng, Jipeng; Nie, Anmin; Wu, Jinsong
Journal:
Advanced science
Issue:
Volume 10:Issue 5(2023)
Page Start:
n/a
Record Type:
Journal Article
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3. Comprehensive GaN-on-Si power device platform: epitaxy, device, reliability and application. (4th May 2021)

Authors:
Wong, Roy K-Y; Hao, Ronghui; Chou, Allen; Zou, Y B; Shen, J Y; Li, Sichao; Yang, C; Hu, Tiger; Chen, F; Zhang, J H; Zhang, Ray; Cao, Kenny; Chen, L L; Zhao, Thomas; He, Simon; Lee, Seiya; Zhang, Martin; Wu, Marco; Lee, John; Chen, P W
Journal:
Semiconductor science and technology
Issue:
Volume 36:Number 6(2021)
Page Start:
Record Type:
Journal Article
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4. Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability *Project supported by the Key Technologies Support Program of Jiangsu Province (No. BE2013002-2) and the National Key Scientific Instrument and Equipment Development Projects of China (No. 2013YQ470767). (July 2017)

Authors:
Li, Weiyi; Zhang, Zhili; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Sun, Shichuang; Song, Liang; Hao, Ronghui; Fan, Yaming; Cai, Yong; Zhang, Baoshun
Journal:
Journal of semiconductors
Issue:
Volume 38:Number 7(2017:Jul.)
Page Start:
Record Type:
Journal Article
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5. Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid. (25th July 2016)

Authors:
Zhang, Zhili; Qin, Shuangjiao; Fu, Kai; Yu, Guohao; Li, Weiyi; Zhang, Xiaodong; Sun, Shichuang; Song, Liang; Li, Shuiming; Hao, Ronghui; Fan, Yaming; Sun, Qian; Pan, Gebo; Cai, Yong; Zhang, Baoshun
Journal:
Applied physics express
Issue:
Volume 9:Number 8(2016:Aug.)
Page Start:
Record Type:
Journal Article
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6. Monolithic integration of enhancement/depletion-mode high electron mobility transistors using hydrogen plasma treatment. (12th February 2019)

Authors:
Hao, Ronghui; Sun, Chi; Fang, Bin; Xu, Ning; Tao, Zhifu; Zhang, Hui; Wei, Xing; Lin, Wenkui; Zhang, Xiaodong; Yu, Guohao; Zeng, Zhongming; Cai, Yong; Zhang, Xinping; Zhang, Baoshun
Journal:
Applied physics express
Issue:
Volume 12:Number 3(2019)
Page Start:
Record Type:
Journal Article
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