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You searched for: Author/Creator Ha, M.‐W.Limit your search
- Ha, M.‐W. [remove] 1
- 621.381 1
- AlGaN‐GaN -- Si 1
- Electronics -- Periodicals 1
- aluminium compounds -- current density -- gallium compounds -- hafnium compounds -- III‐V semiconductors -- insulators -- power MOSFET -- silicon -- tantalum compounds -- wide band gap semiconductors 1
- high‐breakdown voltage -- MOS‐HEMT -- metal‐oxide‐semiconductor‐high‐electron‐mobility transistors -- extended gate -- Si -- AlGaN‐GaN -- voltage 2 V -- voltage 1410 V -- drain current density -- on‐resistance density -- blocked gate leakage current -- blocked gate leakage surface -- RF‐sputtered gate insulator 1
- voltage -- voltage 1