High‐breakdown voltage and low on‐resistance AlGaN/GaN on Si MOS‐HEMTs employing an extended TaN gate on HfO2 gate insulator. Issue 6 (1st March 2013)

• Record Type: Journal Article
• Authors: Seok, O.; Ahn, W.; Han, M.‐K.; Ha, M.‐W.
• Is Part Of: Electronics letters. Volume 49:Issue 6(2013)
• Page Start: 425
• Page End: 427
• Publication Date: 2013-03-01
• Subjects: AlGaN‐GaN -- Si; voltage -- voltage; aluminium compounds -- current density -- gallium compounds -- hafnium compounds -- III‐V semiconductors -- insulators -- power MOSFET -- silicon -- tantalum compounds -- wide band gap semiconductors; high‐breakdown voltage -- MOS‐HEMT -- metal‐oxide‐semiconductor‐high‐electron‐mobility transistors -- extended gate -- Si -- AlGaN‐GaN -- voltage 2 V -- voltage 1410 V -- drain current density -- on‐resistance density -- blocked gate leakage current -- blocked gate leakage surface -- RF‐sputtered gate insulator; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.0149
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Proposed is a new extended gate towards a source in AlGaN/GaN metal‐oxide‐semiconductor–high‐electron‐mobility transistors (MOS‐HEMTs) in order to increase breakdown voltage and reduce on‐resistance. The TaN gate was isolated from the source by a 15 nm‐thick RF‐sputtered HfO2 gate insulator. A high breakdown voltage of 1410 V was measured as a result of the successfully blocked gate leakage current and surface passivation by the HfO2 gate insulator. The extended gate towards the source was an effective method to improve the on‐resistance and drain current density by eliminating the gate‐source space. The proposed device with the extended gate exhibited low specific on‐resistance of 2.28 mΩ·cm 2 while that of the MOS‐HEMT with the conventional structure was 2.91 mΩ·cm 2 . Also, maximum drain current density at the VGS of 2 V was increased from 332 to 420 mA/mm by the proposed extended TaN gate.