1. Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition. (20th October 2017) Authors: Agarwal, Anchal; Gupta, Chirag; Alhassan, Abdullah; Mates, Tom; Keller, Stacia; Mishra, Umesh Journal: Applied physics express Issue: Volume 10:Number 11(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Acute Hydrops With Corneal Perforation in Post-LASIK Ectasia. Issue 1 (January 2015) Authors: Gupta, Chirag; Tanaka, Thais Shiota; Elner, Victor M.; Soong, H. Kaz Journal: Cornea Issue: Volume 34:Issue 1(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition. (13th March 2018) Authors: Chan, Silvia H.; Bisi, Davide; Tahhan, Maher; Gupta, Chirag; DenBaars, Steven P.; Keller, Stacia; Zanoni, Enrico; Mishra, Umesh K. Journal: Applied physics express Issue: Volume 11:Number 4(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels. (2nd November 2016) Authors: Gupta, Chirag; Chan, Silvia H.; Lund, Cory; Agarwal, Anchal; Koksaldi, Onur S.; Liu, Junquian; Enatsu, Yuuki; Keller, Stacia; Mishra, Umesh K. Journal: Applied physics express Issue: Volume 9:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD. (14th November 2016) Authors: Agarwal, Anchal; Gupta, Chirag; Enatsu, Yuuki; Keller, Stacia; Mishra, Umesh Journal: Semiconductor science and technology Issue: Volume 31:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays. (16th December 2020) Authors: Pasayat, Shubhra S.; Gupta, Chirag; Wong, Matthew S.; Ley, Ryan; Gordon, Michael J.; DenBaars, Steven P.; Nakamura, Shuji; Keller, Stacia; Mishra, Umesh K. Journal: Applied physics express Issue: Volume 14:Number 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN. (17th October 2019) Authors: Pasayat, Shubhra S; Gupta, Chirag; Acker-James, Dillon; Cohen, Daniel A; DenBaars, Steven P; Nakamura, Shuji; Keller, Stacia; Mishra, Umesh K Other Names: collab. Journal: Semiconductor science and technology Issue: Volume 34:Number 11(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain. (11th February 2019) Authors: Gupta, Chirag; Tsukada, Yusuke; Romanczyk, Brian; Pasayat, Shubhra S; James, Dillon-Acker; Ahmadi, Elaheh; Keller, Stacia; Mishra, Umesh K Journal: Japanese journal of applied physics Issue: Volume 58:Number 3(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE. (11th March 2019) Authors: Pasayat, Shubhra S; Ahmadi, Elaheh; Romanczyk, Brian; Koksaldi, Onur; Agarwal, Anchal; Guidry, Matthew; Gupta, Chirag; Wurm, Christian; Keller, Stacia; Mishra, Umesh K Journal: Semiconductor science and technology Issue: Volume 34:Number 4(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Flatband voltage stability and time to failure of MOCVD-grown SiO2 and Si3N4 dielectrics on N-polar GaN. (29th October 2019) Authors: Sayed, Islam; Liu, Wenjian; Chan, Silvia; Gupta, Chirag; Li, Haoran; Keller, Stacia; Mishra, Umesh K. Journal: Applied physics express Issue: Volume 12:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗