1. (Invited) Low Power Tunneling FET Technologies Using Ge/III-V Materials. (1st August 2017) Authors: Takagi, Shinichi; Ahn, Dae-Hwan; Noguchi, Munetaka; Yoon, Sanghee; Gotow, Takahiro; Nishi, Koichi; Kim, Minsoo; Bae, Tae-Eon; Katoh, Takumi; Matsumura, Ryo; Takaguchi, Ryotaro; Takenaka, Mitsuru Journal: ECS transactions Issue: Volume 80:Number 4(2017) Page Start: 115 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) MOS Interface Defect Control in Ge/III-V Gate Stacks. (16th August 2017) Authors: Takagi, Shinichi; Ke, Mengnan; Chang, Chih-Yu; Yokoyama, Chiaki; Yokoyama, Masafumi; Gotow, Takahiro; Nishi, Koichi; Yoon, Sanghee; Takenaka, Mitsuru Journal: ECS transactions Issue: Volume 80:Number 1(2017) Page Start: 109 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. (Invited) Tunneling FET Device Technology for Ultra-Low Power Integrated Circuits. (3rd July 2019) Authors: Takagi, Shinichi; Kato, Kimihiko; Ahn, Dae-Hwan; Gotow, Takahiro; Takaguchi, Ryotaro; Bae, Tae-Eon; Toprasertpong, Kasidit; Takenaka, Mitsuru Journal: ECS transactions Issue: Volume 92:Number 4(2019) Page Start: 59 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. (Invited)Ultra-Low Power III-V-Based MOSFETs and Tunneling FETs. (10th April 2018) Authors: Takagi, Shinichi; Ahn, Dae-Hwan; Gotow, Takahiro; Yokoyama, Chiaki; Chang, Chih-Yu; Endo, Kiyoshi; Kato, Kimihiko; Takenaka, Mitsuru Journal: ECS transactions Issue: Volume 85:Number 8(2018) Page Start: 27 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Cordyceps militaris improves the survival of Dahl salt-sensitive hypertensive rats possibly via influences of mitochondria and autophagy functions. Issue 11 (November 2017) Authors: Takakura, Kentaro; Ito, Shogo; Sonoda, Junya; Tabata, Koji; Shiozaki, Motoko; Nagai, Kaoru; Shibata, Masahiro; Koike, Masato; Uchiyama, Yasuo; Gotow, Takahiro Journal: Heliyon Issue: Volume 3:Issue 11(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Dependence of process damage on GaN channel thickness in AlGaN/GaN high-electron-mobility transistors with back-barrier layers. (1st April 2023) Authors: Ito, Yoshikaze; Tamai, Seita; Hoshi, Takuya; Gotow, Takahiro; Miyamoto, Yasuyuki Journal: Japanese journal of applied physics Issue: Volume 62:Number SC(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Dependence of process damage on GaN channel thickness in AlGaN/GaN high-electron-mobility transistors with back-barrier layers. (1st April 2023) Authors: Ito, Yoshikaze; Tamai, Seita; Hoshi, Takuya; Gotow, Takahiro; Miyamoto, Yasuyuki Journal: Japanese journal of applied physics Issue: Volume 62:Number SC(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Drive current enhancement of Si MOSFETs by using anti-ferroelectric gate insulators. (27th March 2019) Authors: Yamaguchi, Masashi; Gotow, Takahiro; Takenaka, Mitsuru; Takagi, Shinichi Journal: Japanese journal of applied physics Issue: Volume 58:Number SB(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Effects of HCl treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal–oxide–semiconductor structures. (19th January 2015) Authors: Gotow, Takahiro; Fujikawa, Sachie; Fujishiro, Hiroki I.; Ogura, Mutsuo; Yasuda, Tetsuji; Maeda, Tatsuro Journal: Japanese journal of applied physics Issue: Volume 54:Number 2(2015:Jan.)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained‐Al0.40In0.60Sb/Al1–yInySb Stepped Buffer. Issue 3 (12th November 2019) Authors: Hiraoka, Mizuho; Endoh, Yuki; Osawa, Koki; Kishimoto, Naoyuki; Hayashi, Takuya; Machida, Ryuto; Watanabe, Issei; Yamashita, Yoshimi; Hara, Shinsuke; Gotow, Takahiro; Kasamatsu, Akifumi; Endoh, Akira; Fujishiro, Hiroki I. Other Names: Tanaka Masaaki guestEditor.; Sugiyama Masakazu guestEditor.; Fujii Takuro guestEditor.; Ohya Shinobu guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 3(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗