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You searched for: Author/Creator Gordon, Ivan

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1. A novel silicon heterojunction IBC process flow using partial etching of doped a‐Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%. (8th January 2019)

3. Broadband absorption enhancement in ultra‐thin crystalline Si solar cells by incorporating metallic and dielectric nanostructures in the back reflector. (19th July 2014)

4. Contact resistivity reduction on lowly-doped n-type Si using a low work function metal and a thin TiOX interfacial layer for doping-free Si solar cells. (September 2017)

5. Contact resistivity reduction on lowly-doped n-type Si using a low workfunction metal and a thin TiOX interfacial layer for doping-free Si solar cells. (September 2017)

6. Electrical and optical simulation of nPERT solar cells with epitaxially grown emitters. (September 2017)

7. Evaluation of the influence of an embedded porous silicon layer on the bulk lifetime of epitaxial layers and the interface recombination at the epitaxial layer/porous silicon interface. (15th February 2013)

8. Excellent via passivation and high open circuit voltage for large-area n-type MWT-PERT silicon solar cells. (September 2017)