Author/Creator: Go, Seungwon - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Go, Seungwon

1. A low-power nanoelectromechanical (NEM) device with Al-doped HfO2-based ferroelectric capacitor. (January 2021)

Authors:: Kim, Shinhee; Park, Jae Yeon; Go, Seungwon; Kwon, Hyug Su; Choi, Woo Young; Kim, Sangwan
Journal:: Solid-state electronics
Issue:: Volume 175(2021)
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Record Type:: Journal Article
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2. Design optimization of heterojunction 1T DRAM cell with SiGe body/drain for high performance. (1st December 2022)

Authors:: Go, Seungwon; Kim, Shinhee; Lee, Dong Keun; Park, Jae Yeon; Park, Sora; Kim, Dae Hwan; Kim, Garam; Kim, Sangwan
Journal:: Semiconductor science and technology
Issue:: Volume 37:Number 12(2022)
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Record Type:: Journal Article
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3. Impact of sidewall spacer materials and gate underlap length on negative capacitance double-gate tunnel field-effect transistor (NCDG-TFET). (December 2022)

Authors:: Go, Seungwon; Kim, Shinhee; Park, Jae Yeon; Lee, Dong Keun; Noh, Hyung Ju; Park, So Ra; Kim, Yoon; Kim, Dae Hwan; Kim, Sangwan
Journal:: Solid-state electronics
Issue:: Volume 198(2022)
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Record Type:: Journal Article
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4. Simulation study about negative capacitance effects on recessed channel tunnel FET. (16th April 2021)

Authors:: Kim, Shinhee; Go, Seungwon; Kim, Sangwan
Journal:: Japanese journal of applied physics
Issue:: Volume 60:Number SC(2021)
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Record Type:: Journal Article
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