Simulation study about negative capacitance effects on recessed channel tunnel FET. (16th April 2021)

• Record Type: Journal Article
• Authors: Kim, Shinhee; Go, Seungwon; Kim, Sangwan
• Is Part Of: Japanese journal of applied physics. Volume 60:Number SC(2021)
• Publication Date: 2021-04-16
• Subjects: Tunnel FET (TFET) -- Negative Capacitance (NC) -- NC-TFET -- Ferroelectric (FE) -- Recessed Channel TFET (RCTFET); Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abf2d2
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: A recessed-channel tunnel field-effect transistor (RCTFET) with intrinsic Si layer between gate and source/drain is proposed and its electrical characteristics are examined by technology computer-aided design simulation for lower subthreshold swing ( SS ) and higher on-off current ratio ( I ON / I OFF ) than conventional planar TFET. Although the SS and I ON / I OFF of RCTFET can be improved by optimizing the length of the intrinsic Si layer ( L T ), there is a trade-off in terms of turn-on voltage ( V ON ). To address this issue, a ferroelectric (FE) layer has been adopted to the gate stack for negative capacitance (NC) effects. Based on the study, the NC effects not only reduce V ON but also enhance the SS and I ON / I OFF characteristics. As a result, the optimized NC-RCTFET shows 3 times higher I ON and 23 mV dec −1 smaller average SS with 1 V lower V ON than the conventional RCTFET.