1. Gas dependent hysteresis in MoS2 field effect transistors. (23rd September 2019) Authors: Urban, Francesca; Giubileo, Filippo; Grillo, Alessandro; Iemmo, Laura; Luongo, Giuseppe; Passacantando, Maurizio; Foller, Tobias; Madauß, Lukas; Pollmann, Erik; Geller, Martin Paul; Oing, Dennis; Schleberger, Marika; Di Bartolomeo, Antonio Journal: 2D materials Issue: Volume 6:Number 4(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗