Gas dependent hysteresis in MoS2 field effect transistors. (23rd September 2019)

• Record Type: Journal Article
• Authors: Urban, Francesca; Giubileo, Filippo; Grillo, Alessandro; Iemmo, Laura; Luongo, Giuseppe; Passacantando, Maurizio; Foller, Tobias; Madauß, Lukas; Pollmann, Erik; Geller, Martin Paul; Oing, Dennis; Schleberger, Marika; Di Bartolomeo, Antonio
• Is Part Of: 2D materials. Volume 6:Number 4(2019)
• Publication Date: 2019-09-23
• Subjects: MoS2 -- field effect transistor -- hysteresis -- gas adsorption -- memory; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/ab4020
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2 ) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although the gas adsorption does not modify the conduction type, we demonstrate a correlation between hysteresis width and adsorption energy onto the MoS2 surface. We show that hysteresis is controllable by pressure and/or gas type. Hysteresis features two well-separated current levels, especially when gases are stably adsorbed on the channel, which can be exploited in memory devices.