1. Hot electron assisted vertical leakage/breakdown in AlGaN/GaN heterostructures on Si substrates. (July 2017) Authors: Hu, Anqi; Yang, Xuelin; Cheng, Jianpeng; Guo, Lei; Zhang, Jie; Feng, Yuxia; Ji, Panfeng; Tang, Ning; Ge, Weikun; Wang, Xinqiang; Shen, Bo Journal: Superlattices and microstructures Issue: Volume 107(2017) Page Start: 240 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Determination of the transition point from electron accumulation to depletion at the surface of InxGa1−xN films. (23rd January 2018) Authors: Sun, Xiaoxiao; Wang, Xinqiang; Liu, Shitao; Wang, Ping; Wang, Ding; Zheng, Xiantong; Sang, Liwen; Sumiya, Masatomo; Ueda, Shigenori; Li, Mo; Zhang, Jian; Ge, Weikun; Shen, Bo Journal: Applied physics express Issue: Volume 11:Number 2(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy. Issue 9 (27th June 2018) Authors: Wang, Tao; Wang, Xinqiang; Chen, Zhaoying; Sun, Xiaoxiao; Wang, Ping; Zheng, Xiantong; Rong, Xin; Yang, Liuyun; Guo, Weiwei; Wang, Ding; Cheng, Jianpeng; Lin, Xi; Li, Peng; Li, Jun; He, Xin; Zhang, Qiang; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun Journal: Advanced science Issue: Volume 5:Issue 9(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth. Issue 3 (24th June 2019) Authors: Sun, Xiaoxiao; Wang, Ping; Sheng, Bowen; Wang, Tao; Chen, Zhaoying; Gao, Kang; Li, Mo; Zhang, Jian; Ge, Weikun; Arakawa, Yasuhiko; Shen, Bo; Holmes, Mark; Wang, Xinqiang Journal: Quantum engineering Issue: Volume 1:Issue 3(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene. (23rd July 2019) Authors: Feng, Yuxia; Yang, Xuelin; Zhang, Zhihong; Kang, Duan; Zhang, Jie; Liu, Kaihui; Li, Xinzheng; Shen, Jianfei; Liu, Fang; Wang, Tao; Ji, Panfeng; Xu, Fujun; Tang, Ning; Yu, Tongjun; Wang, Xinqiang; Yu, Dapeng; Ge, Weikun; Shen, Bo Journal: Advanced functional materials Issue: Volume 29:Number 42(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. GaN‐on‐Si(100): Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene (Adv. Funct. Mater. 42/2019). (15th October 2019) Authors: Feng, Yuxia; Yang, Xuelin; Zhang, Zhihong; Kang, Duan; Zhang, Jie; Liu, Kaihui; Li, Xinzheng; Shen, Jianfei; Liu, Fang; Wang, Tao; Ji, Panfeng; Xu, Fujun; Tang, Ning; Yu, Tongjun; Wang, Xinqiang; Yu, Dapeng; Ge, Weikun; Shen, Bo Journal: Advanced functional materials Issue: Volume 29:Number 42(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Cover Image. Issue 3 (16th October 2019) Authors: Sun, Xiaoxiao; Wang, Ping; Sheng, Bowen; Wang, Tao; Chen, Zhaoying; Gao, Kang; Li, Mo; Zhang, Jian; Ge, Weikun; Arakawa, Yasuhiko; Shen, Bo; Holmes, Mark; Wang, Xinqiang Journal: Quantum engineering Issue: Volume 1:Issue 3(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Period size effect induced crystalline quality improvement of AlN on a nano-patterned sapphire substrate. (2nd October 2019) Authors: Xie, Nan; Xu, Fujun; Zhang, Na; Lang, Jing; Wang, Jiaming; Wang, Mingxing; Sun, Yuanhao; Liu, Baiyin; Ge, Weikun; Qin, Zhixin; Kang, Xiangning; Yang, Xuelin; Wang, Xinqiang; Shen, Bo Journal: Japanese journal of applied physics Issue: Volume 58:Number 10(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature. Issue 13 (1st June 2020) Authors: Liu, Xingchen; Tang, Ning; Zhang, Shixiong; Zhang, Xiaoyue; Guan, Hongming; Zhang, Yunfan; Qian, Xuan; Ji, Yang; Ge, Weikun; Shen, Bo Journal: Advanced science Issue: Volume 7:Issue 13(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering. (August 2018) Authors: Chen, Zhaoying; Sui, Jingyang; Wang, Xinqiang; Kim, Kumsong; Wang, Ding; Wang, Ping; Wang, Tao; Rong, Xin; Harima, Hiroshi; Yoshikawa, Akihiko; Ge, Weikun; Shen, Bo Journal: Superlattices and microstructures Issue: Volume 120(2018) Page Start: 533 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗