1. Monolithic TCAD simulation of phase-change memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) selector device. (January 2023) Authors: Thesberg, M.; Stanojevic, Z.; Baumgartner, O.; Kernstock, C.; Leonelli, D.; Barci, M.; Wang, X.; Zhou, X.; Jiao, H.; Donadio, G.L.; Garbin, D.; Witters, T.; Kundu, S.; Hody, H.; Delhougne, R.; Kar, G.; Karner, M. Journal: Solid-state electronics Issue: Volume 199(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3. (November 2016) Authors: Azzaz, M.; Benoist, A.; Vianello, E.; Garbin, D.; Jalaguier, E.; Cagli, C.; Charpin, C.; Bernasconi, S.; Jeannot, S.; Dewolf, T.; Audoit, G.; Guedj, C.; Denorme, S.; Candelier, P.; Fenouillet-Beranger, C.; Perniola, L. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 182 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3. (November 2016) Authors: Azzaz, M.; Benoist, A.; Vianello, E.; Garbin, D.; Jalaguier, E.; Cagli, C.; Charpin, C.; Bernasconi, S.; Jeannot, S.; Dewolf, T.; Audoit, G.; Guedj, C.; Denorme, S.; Candelier, P.; Fenouillet-Beranger, C.; Perniola, L. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 182 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗