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Author/Creator Gao, ZHan

1. Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs. (August 2021)

Authors:
Gao, ZHan; Meneghini, Matteo; Harrouche, Kathia; Kabouche, Riad; Chiocchetta, Francesca; Okada, Etienne; Rampazzo, Fabiana; De Santi, Carlo; Medjdoub, Farid; Meneghesso, Gaudenzio; Zanoni, Enrico
Journal:
Microelectronics and reliability
Issue:
Volume 123(2021)
Page Start:
Record Type:
Journal Article
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