1. Elementary gas‐phase reactions of radical species during chemical vapor deposition of silicon carbide using CH3SiCl3. Issue 5 (11th January 2021) Authors: Sato, Noboru; Funato, Yuichi; Shima, Kohei; Sugiura, Hidetoshi; Fukushima, Yasuyuki; Momose, Takeshi; Koshi, Mitsuo; Shimogaki, Yukihiro Journal: International journal of chemical kinetics Issue: Volume 53:Issue 5(2021) Page Start: 638 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Fundamental Evaluation of Gas-Phase Elementary Reaction Models for Silicon Carbide Chemical Vapor Deposition. (19th May 2017) Authors: Funato, Yuichi; Sato, Noboru; Fukushima, Yasuyuki; Sugiura, Hidetoshi; Momose, Takeshi; Shimogaki, Yukihiro Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 7(2017) Page Start: P399 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Fundamental Evaluation of Gas-Phase Elementary Reaction Models for Silicon Carbide Chemical Vapor Deposition. (1st January 2017) Authors: Funato, Yuichi; Sato, Noboru; Fukushima, Yasuyuki; Sugiura, Hidetoshi; Momose, Takeshi; Shimogaki, Yukihiro Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 7(2017) Page Start: P399 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Gas-phase reaction mechanism in chemical dry etching using NF3 and remotely discharged NH3/N2 mixture. Issue 51 (20th August 2020) Authors: Matsugi, Akira; Kubota, Shiro; Funato, Yuichi; Miura, Yutaka; Tonari, Kazuhiko Journal: RSC advances Issue: Volume 10:Issue 51(2020) Page Start: 30806 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. High‐Aspect‐Ratio Parallel‐Plate Microchannels Applicable to Kinetic Analysis of Chemical Vapor Deposition. Issue 16 (7th July 2016) Authors: Shima, Kohei; Funato, Yuichi; Sugiura, Hidetoshi; Sato, Noboru; Fukushima, Yasuyuki; Momose, Takeshi; Shimogaki, Yukihiro Journal: Advanced materials interfaces Issue: Volume 3:Issue 16(2016) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Identification of Film-Forming Species during SiC-CVD of CH3SiCl3/H2 by Exploiting Deep Microtrenches. (1st January 2019) Authors: Shima, Kohei; Sato, Noboru; Funato, Yuichi; Fukushima, Yasuyuki; Momose, Takeshi; Shimogaki, Yukihiro Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 8(2019) Page Start: P423 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Identification of Film-Forming Species during SiC-CVD of CH3SiCl3/H2 by Exploiting Deep Microtrenches. (31st July 2019) Authors: Shima, Kohei; Sato, Noboru; Funato, Yuichi; Fukushima, Yasuyuki; Momose, Takeshi; Shimogaki, Yukihiro Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 8(2019) Page Start: P423 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Identifying the mechanism of formation of chlorinated silane polymer by‐products during chemical vapor infiltration of SiC from CH3SiCl3/H2. Issue 5 (13th January 2022) Authors: Sato, Noboru; Fukushima, Yasuyuki; Shima, Kohei; Funato, Yuichi; Momose, Takeshi; Koshi, Mitsuo; Shimogaki, Yukihiro Journal: International journal of chemical kinetics Issue: Volume 54:Issue 5(2022) Page Start: 300 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Microchannels: High‐Aspect‐Ratio Parallel‐Plate Microchannels Applicable to Kinetic Analysis of Chemical Vapor Deposition (Adv. Mater. Interfaces 16/2016). Issue 16 (August 2016) Authors: Shima, Kohei; Funato, Yuichi; Sugiura, Hidetoshi; Sato, Noboru; Fukushima, Yasuyuki; Momose, Takeshi; Shimogaki, Yukihiro Journal: Advanced materials interfaces Issue: Volume 3:Issue 16(2016) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Modeling of the elementary gas‐phase reaction during chemical vapor deposition of silicon carbide from CH3SiCl3/H2. Issue 6 (23rd March 2020) Authors: Sato, Noboru; Funato, Yuichi; Fukushima, Yasuyuki; Momose, Takeshi; Koshi, Mitsuo; Shimogaki, Yukihiro Journal: International journal of chemical kinetics Issue: Volume 52:Issue 6(2020) Page Start: 359 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗