1. Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes. (25th February 2019) Authors: Kobayashi, Hiroto; Yokogawa, Ryo; Kinoshita, Kosuke; Numasawa, Yohichiroh; Ogura, Atsushi; Nishizawa, Shin-ichi; Saraya, Takuya; Ito, Kazuo; Takakura, Toshihiko; Suzuki, Shin-ichi; Fukui, Munetoshi; Takeuchi, Kiyoshi; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 58:Number SB(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs. (4th March 2020) Authors: Saraya, Takuya; Itou, Kazuo; Takakura, Toshihiko; Fukui, Munetoshi; Suzuki, Shinichi; Takeuchi, Kiyoshi; Kakushima, Kuniyuki; Hoshii, Takuya; Tsutsui, Kazuo; Iwai, Hiroshi; Nishizawa, Shin-ichi; Omura, Ichiro; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 59:Number SG(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor. (2nd November 2020) Authors: Yokogawa, Ryo; Kobayashi, Hiroto; Numasawa, Yohichiroh; Ogura, Atsushi; Nishizawa, Shin-ichi; Saraya, Takuya; Ito, Kazuo; Takakura, Toshihiko; Suzuki, Shinichi; Fukui, Munetoshi; Takeuchi, Kiyoshi; Hiramoto, Toshiro Journal: Japanese journal of applied physics Issue: Volume 59:Number 11(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗