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Author/Creator Fortune, Torben R.

1. Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature. (1st January 2017)

Authors:
Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.; Armstrong, Andrew M.; Douglas, Erica A.; Stephenson, Chad A.; Fortune, Torben R.; Kaplar, Robert J.
Journal:
ECS journal of solid state science and technology
Issue:
Volume 6:Number 12(2017)
Page Start:
Q161
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

2. Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature. (9th December 2017)

Authors:
Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.; Armstrong, Andrew M.; Douglas, Erica A.; Stephenson, Chad A.; Fortune, Torben R.; Kaplar, Robert J.
Journal:
ECS journal of solid state science and technology
Issue:
Volume 6:Number 12(2017)
Page Start:
Q161
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

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