1. 2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si. Issue 1 (1998) Authors: Formicone, Gabriele F.; Vasileska, Dragica; Ferry, David K. Journal: VLSI design Issue: Volume 6:Issue 1/4(1998) Page Start: 167 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗