1. Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy. (24th January 2017) Authors: Ferrandis, Philippe; Charles, Matthew; Baines, Yannick; Buckley, Julien; Garnier, Gennie; Gillot, Charlotte; Reimbold, Gilles Journal: Japanese journal of applied physics Issue: Volume 56:Number 4(2017)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗