1. Deep traps localization in AlGaN/GaN MIS-HEMTs by a comparative study using capacitance and current deep level transient spectroscopies. (May 2019) Authors: El-Khatib, Mariam; Ferrandis, Philippe; Morvan, Erwan; Guillot, Gérard; Bremond, Georges Journal: Journal of physics Issue: Volume 1190(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors. (11th March 2019) Authors: Ferrandis, Philippe; El-Khatib, Mariam; Jaud, Marie-Anne; Morvan, Erwan; Charles, Matthew; Guillot, Gérard; Bremond, Georges Journal: Semiconductor science and technology Issue: Volume 34:Number 4(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy. (24th January 2017) Authors: Ferrandis, Philippe; Charles, Matthew; Baines, Yannick; Buckley, Julien; Garnier, Gennie; Gillot, Charlotte; Reimbold, Gilles Journal: Japanese journal of applied physics Issue: Volume 56:Number 4(2017)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗