1. A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms. (February 2016) Authors: Solaro, Y.; Fonteneau, P.; Legrand, C.A.; Fenouillet-Beranger, C.; Ferrari, P.; Cristoloveanu, S. Journal: Solid-state electronics Issue: Volume 116(2016) Page Start: 8 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms. (February 2016) Authors: Solaro, Y.; Fonteneau, P.; Legrand, C.A.; Fenouillet-Beranger, C.; Ferrari, P.; Cristoloveanu, S. Journal: Solid-state electronics Issue: Volume 116(2016) Page Start: 8 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration. (November 2015) Authors: Fenouillet-Beranger, C.; Previtali, B.; Batude, P.; Nemouchi, F.; Cassé, M.; Garros, X.; Tosti, L.; Rambal, N.; Lafond, D.; Dansas, H.; Pasini, L.; Brunet, L.; Deprat, F.; Grégoire, M.; Mellier, M.; Vinet, M. Journal: Solid-state electronics Issue: Volume 113(2015) Page Start: 2 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3. (November 2016) Authors: Azzaz, M.; Benoist, A.; Vianello, E.; Garbin, D.; Jalaguier, E.; Cagli, C.; Charpin, C.; Bernasconi, S.; Jeannot, S.; Dewolf, T.; Audoit, G.; Guedj, C.; Denorme, S.; Candelier, P.; Fenouillet-Beranger, C.; Perniola, L. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 182 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3. (November 2016) Authors: Azzaz, M.; Benoist, A.; Vianello, E.; Garbin, D.; Jalaguier, E.; Cagli, C.; Charpin, C.; Bernasconi, S.; Jeannot, S.; Dewolf, T.; Audoit, G.; Guedj, C.; Denorme, S.; Candelier, P.; Fenouillet-Beranger, C.; Perniola, L. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 182 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration. (June 2018) Authors: Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M.V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M. Journal: Solid-state electronics Issue: Volume 144(2018) Page Start: 78 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗