11. GaN grown on nano-patterned sapphire substrates*Project supported by the Suzhou Nanojoin Photonics Co., Ltd and the High-Tech Achievements Transformation of Jiangsu Province, China (No.BA2012010). (April 2015) Authors: Kong, Jing; Feng, Meixin; Cai, Jin; Wang, Hui; Wang, Huaibing; Yang, Hui Journal: Journal of semiconductors Issue: Volume 36:Number 4(2015:Apr.) Page Start: 1705 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
12. GaN-based distributed feedback laser diodes grown on Si. (12th May 2022) Authors: Tang, Yongjun; Feng, Meixin; Liu, Jianxun; Sun, Xiujian; Yan, Shumeng; Fan, Shizhao; Sun, Qian; Zhang, Shuming; Ikeda, Masao; Yang, Hui Journal: Journal of physics Issue: Volume 55:Number 19(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
13. High accuracy thermal resistance measurement in GaN/InGaN laser diodes. (April 2015) Authors: Wen, Pengyan; Li, Deyao; Zhang, Shuming; Liu, Jianping; Zhang, Liqun; Zhou, Kun; Feng, Meixin; Li, Zengcheng; Tian, Aiqin; Yang, Hui Journal: Solid-state electronics Issue: Volume 106(2015) Page Start: 50 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
14. High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111). (26th June 2017) Authors: Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui Journal: Applied physics express Issue: Volume 10:Number 7(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
15. III-nitride semiconductor lasers grown on Si. (May 2021) Authors: Feng, Meixin; Liu, Jianxun; Sun, Qian; Yang, Hui Journal: Progress in quantum electronics Issue: Volume 77(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
16. Lift-off of GaN-based LED membranes from Si substrate through electrochemical etching. (1st August 2022) Authors: Jiang, Tianhao; Wang, Jian; Liu, Jiaqi; Feng, Meixin; Yan, Shumeng; Chen, Wen; Sun, Qian; Yang, Hui Journal: Applied physics express Issue: Volume 15:Number 8(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
17. Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure *Project supported by the National Key R&D Program (Nos. 2016YFB0400100, 2016YFB0400104), the National Natural Science Foundation of China (Nos. 61534007, 61404156, 61522407, 61604168, 61775230), the Key Frontier Scientific Research Program of the Chinese Academy of Sciences (No. QYZDB-SSW-JSC014), the Science and Technology Service Network Initiative of the Chinese Academy of Sciences, the Key R&D Program of Jiangsu Province (No. BE2017079), the Natural Science Foundation of Jiangsu Province (No. BK20160401), and the China Postdoctoral Science Foundation (No. 2016M591944). This work was also supported by the Open Fund of the State Key Laboratory of Luminescence and Applications (No. SKLA-2016-01), the Open Fund of the State Key Laboratory on Integrated Optoelectronics (Nos. IOSKL2016KF04, IOSKL2016KF07), and the Seed Fund from SINANO, CAS (No. Y5AAQ51001). (April 2018) Authors: Li, Zengcheng; Feng, Bo; Deng, Biao; Liu, Legong; Huang, Yingnan; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Sun, Qian; Wang, Huaibing; Yang, Xiaoli; Yang, Hui Journal: Journal of semiconductors Issue: Volume 39:Number 4(2018:Apr.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
18. Realization of GaN-based gain-guided blue laser diodes by helium ion implantation. (1st October 2019) Authors: Zhang, Qi; Zhang, Shuming; Zhang, Feng; Hu, Junjie; Feng, Meixin; Ikeda, Masao; Li, Deyao; Liu, Jianping; Yang, Weiguang; Zhang, Liqun; Yang, Hui Journal: Semiconductor science and technology Issue: Volume 34:Number 11(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
19. Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact. (10th April 2019) Authors: He, Junlei; Zhong, Yaozong; Zhou, Yu; Guo, Xiaolu; Huang, Yingnan; Liu, Jianxun; Feng, Meixin; Sun, Qian; Ikeda, Masao; Yang, Hui Journal: Applied physics express Issue: Volume 12:Number 5(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
20. Suppression of recombination in waveguide in c-plane InGaN-based green laser diodes. (November 2017) Authors: Cheng, Yang; Liu, Jianping; Zhang, Liqun; Jiang, Desheng; Tian, Aiqin; Zhang, Feng; Feng, Meixin; Wen, Pengyan; Zhou, Wei; Zhang, Shuming; Ikeda, Masao; Li, Deyao; Yang, Hui Journal: Superlattices and microstructures Issue: Volume 111(2017) Page Start: 1121 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗