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2. Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors. Issue 11 (25th July 2014)

4. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (1st January 2018)

5. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (20th January 2018)

7. Processing Technologies for Advanced Ge Devices. (1st January 2017)

8. Processing Technologies for Advanced Ge Devices. (5th December 2016)