1. Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides. (28th July 2015) Authors: Wełna, M; Kudrawiec, R; Nabetani, Y; Tanaka, T; Jaquez, M; Dubon, O D; Yu, K M; Walukiewicz, W Journal: Semiconductor science and technology Issue: Volume 30:Number 8(2015:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. THz transient photoconductivity of the III–V dilute nitride GaPyAs1−y−xNx. (26th October 2018) Authors: Heyman, J N; Weiss, E M; Rollag, J R; Yu, K M; Dubon, O D; Kuang, Y J; Tu, C W; Walukiewicz, W Journal: Semiconductor science and technology Issue: Volume 33:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗