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2. Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene. Issue 23 (16th April 2019)

3. Robust production of 2D quantum sheets from bulk layered materials. Issue 7 (21st May 2019)

5. Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD (Small 16/2022). Issue 16 (21st April 2022)

6. Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD. Issue 16 (10th February 2022)

8. Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High‐Performance Deep‐Ultraviolet Light‐Emitting Diodes. Issue 18 (1st July 2018)

9. Enhancement of Heat Dissipation in Ultraviolet Light‐Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer. Issue 29 (29th May 2019)

10. UV Light‐Emitting Diodes: Enhancement of Heat Dissipation in Ultraviolet Light‐Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer (Adv. Mater. 29/2019). Issue 29 (16th July 2019)