1. 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C. Issue 20 (1st September 2014) Authors: Chen, S.M.; Tang, M.C.; Wu, J.; Jiang, Q.; Dorogan, V.G.; Benamara, M.; Mazur, Y.I.; Salamo, G.J.; Seeds, A.J.; Liu, H. Journal: Electronics letters Issue: Volume 50:Issue 20(2014) Page Start: 1467 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗