1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C. Issue 20 (1st September 2014)

• Record Type: Journal Article
• Authors: Chen, S.M.; Tang, M.C.; Wu, J.; Jiang, Q.; Dorogan, V.G.; Benamara, M.; Mazur, Y.I.; Salamo, G.J.; Seeds, A.J.; Liu, H.
• Is Part Of: Electronics letters. Volume 50:Issue 20(2014)
• Page Start: 1467
• Page End: 1468
• Publication Date: 2014-09-01
• Subjects: indium compounds -- quantum dot lasers -- gallium arsenide -- III‐V semiconductors -- semiconductor superlattices -- laser transitions; quantum dot laser -- strained‐layer superlattice -- SLS -- dislocation filter layers -- DFL -- threshold current density -- wavelength 1.3 mum -- temperature 293 K to 298 K -- InAs‐GaAs; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.2414
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A high‐performance 1.3 μm InAs/GaAs quantum‐dot laser directly grown on Si substrates has been achieved by using InAlAs/GaAs strained‐layer superlattice serving as dislocation filter layers (DFLs). The Si‐based laser achieves lasing operation up to 111°C with a threshold current density of 200 A/cm 2 and an output power exceeding 100 mW at room temperature.