1. 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications. (23rd February 2014) Authors: Gardès, Cyrille; Bagumako, Sonia; Desplanque, Ludovic; Wichmann, Nicolas; Bollaert, Sylvain; Danneville, François; Wallart, Xavier; Roelens, Yannick Other Names: Lin Y.-S. Academic Editor.; Paris J. F. Academic Editor.; Park J.-H. Academic Editor. Journal: TheScientificWorldjournal Issue: Volume 2014(2014) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy. (19th November 2018) Authors: Pastorek, Matej; Olivier, Aurélien; Lechaux, Yoann; Wichmann, Nicolas; Karatsori, Théano; Fahed, Maria; Bucamp, Alexandre; Addad, Ahmed; Troadec, David; Ghibaudo, Gérard; Desplanque, Ludovic; Wallart, Xavier; Bollaert, Sylvain Journal: Nanotechnology Issue: Volume 30:Number 3(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP (Phys. Status Solidi B 10/2016). Issue 10 (7th October 2016) Authors: Bonato, Leo; Arikan, Ismail Firat; Desplanque, Ludovic; Coinon, Christophe; Wallart, Xavier; Wang, Yi; Ruterana, Pierre; Bimberg, Dieter Journal: Physica status solidi Issue: Volume 253:Issue 10(2016) Page Start: 1869 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP. Issue 10 (6th September 2016) Authors: Bonato, Leo; Arikan, Ismail Firat; Desplanque, Ludovic; Coinon, Christophe; Wallart, Xavier; Wang, Yi; Ruterana, Pierre; Bimberg, Dieter Journal: Physica status solidi Issue: Volume 253:Issue 10(2016) Page Start: 1877 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior. (25th April 2016) Authors: El Kazzi, Salim; Alireza, A; Bordallo, Caio Cesar Mendes; Smets, Quentin; Desplanque, Ludovic; Wallart, Xavier; Richard, Olivier; Douhard, Bastien; Verhulst, Anne; Collaert, Nadine; Merckling, Clement; Heyns, Marc; Thean, Aaron Journal: ECS transactions Issue: Volume 72:Number 3(2016) Page Start: 73 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping. (8th May 2017) Authors: Desplanque, Ludovic; Coinon, Christophe; Troadec, David; Ruterana, Pierre; Patriarche, Gilles; Bonato, Leo; Bimberg, Dieter; Wallart, Xavier Journal: Nanotechnology Issue: Volume 28:Number 22(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗