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Author/Creator Derluyn, Joff

2. High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Issue 9 (August 2015)

Authors:
Fleury, Clément; Capriotti, Mattia; Rigato, Matteo; Hilt, Oliver; Würfl, Joachim; Derluyn, Joff; Steinhauer, Stephan; Köck, Anton; Strasser, Gottfried; Pogany, Dionyz
Journal:
Microelectronics and reliability
Issue:
Volume 55:Issue 9/10(2015)
Page Start:
1687
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗

3. Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures. Issue 7 (11th November 2019)

Authors:
Kabouche, Riad; Abid, Idriss; Püsche, Roland; Derluyn, Joff; Degroote, Stefan; Germain, Marianne; Tajalli, Alaleh; Meneghini, Matteo; Meneghesso, Gaudenzio; Medjdoub, Farid
Other Names:
Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor.
Journal:
Physica status solidi
Issue:
Volume 217:Issue 7(2020)
Page Start:
n/a
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗