1. Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation. (November 2017) Authors: Chvála, Aleš; Marek, Juraj; Príbytný, Patrik; Šatka, Alexander; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Donoval, Daniel Journal: Microelectronics and reliability Issue: Volume 78(2017) Page Start: 148 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics. (January 2015) Authors: Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan Journal: Solid-state electronics Issue: Volume 103(2015) Page Start: 127 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs. (30th January 2020) Authors: Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Journal: Applied physics express Issue: Volume 13:Number 2(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Comparison of AlGaN/GaN MISHEMT powerbar designs. Issue 3 (7th February 2014) Authors: Stoffels, Steve; Ronchi, Nicoló; Venegas, Rafael; De Jaeger, Brice; Marcon, Denis; Decoutere, Stefaan Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor. Journal: Physica status solidi Issue: Volume 11:Issue 3/4(2014:Apr.) Page Start: 906 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy. Issue 23 (29th July 2021) Authors: Hsu, Po-Chun; Simoen, Eddy; Liang, Hu; De Jaeger, Brice; Bakeroot, Benoit; Wellekens, Dirk; Decoutere, Stefaan Other Names: Brehm Moritz guestEditor.; Springholz Gunther guestEditor. Journal: Physica status solidi Issue: Volume 218:Issue 23(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability. (July 2022) Authors: Gallardo, Jethro Oroceo; Dash, Sachidananda; Tran, Thanh Nga; Huang, Zhen-Hong; Tang, Shun-Wei; Wellekens, Dirk; Bakeroot, Benoit; Syshchyk, Olga; De Jaeger, Brice; Decoutere, Stefaan; Wu, Tian-Li Journal: Microelectronics and reliability Issue: Volume 134(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and VT instability effect. (28th January 2021) Authors: You, Shuzhen; Li, Xiangdong; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan Journal: Semiconductor science and technology Issue: Volume 36:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Growth and characterization of DH‐HEMT structures with various AlGaN barriers and AlN interlayers on 200 mm Si(111) substrates. Issue 3 (28th January 2014) Authors: Zhao, Ming; Saripalli, Yoga; Kandaswamy, Prem Kumar; Liang, Hu; Firrincieli, Andrea; Decoutere, Stefaan; Vancoille, Eric Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor. Journal: Physica status solidi Issue: Volume 11:Issue 3/4(2014:Apr.) Page Start: 446 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates. (14th February 2018) Authors: Van Hove, Marleen; Posthuma, Niels; Geens, Karen; Wellekens, Dirk; Li, Xiangdong; Decoutere, Stefaan Journal: Japanese journal of applied physics Issue: Volume 57:Number 4(2018)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Integration of GaN analog building blocks on p-GaN wafers for GaN ICs. (February 2021) Authors: Li, Xiangdong; Geens, Karen; Amirifar, Nooshin; Zhao, Ming; You, Shuzhen; Posthuma, Niels; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan Journal: Journal of semiconductors Issue: Volume 42:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗