1. Film Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications. (23rd December 2020) Authors: Nagano, F.; Iacovo, S.; Phommahaxay, A.; Inoue, F.; Sleeckx, E.; Beyer, G.; Beyne, E.; De. Gendt, S. Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 12(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance. (1st March 2023) Authors: Nagano, F.; Inoue, F.; Phommahaxay, A.; Peng, L.; Chancerel, F.; Naser, H.; Beyer, G.; Uedono, A.; Beyne, E.; De. Gendt, S.; Iacovo, S. Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance. (2nd March 2023) Authors: Nagano, F.; Inoue, F.; Phommahaxay, A.; Peng, L.; Chancerel, F.; Naser, H.; Beyer, G.; Uedono, A.; Beyne, E.; De. Gendt, S.; Iacovo, S. Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance. (2nd March 2023) Authors: Nagano, F.; Inoue, F.; Phommahaxay, A.; Peng, L.; Chancerel, F.; Naser, H.; Beyer, G.; Uedono, A.; Beyne, E.; De. Gendt, S.; Iacovo, S. Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance. (2nd March 2023) Authors: Nagano, F.; Inoue, F.; Phommahaxay, A.; Peng, L.; Chancerel, F.; Naser, H.; Beyer, G.; Uedono, A.; Beyne, E.; De. Gendt, S.; Iacovo, S. Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance. (2nd March 2023) Authors: Nagano, F.; Inoue, F.; Phommahaxay, A.; Peng, L.; Chancerel, F.; Naser, H.; Beyer, G.; Uedono, A.; Beyne, E.; De. Gendt, S.; Iacovo, S. Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance. (2nd March 2023) Authors: Nagano, F.; Inoue, F.; Phommahaxay, A.; Peng, L.; Chancerel, F.; Naser, H.; Beyer, G.; Uedono, A.; Beyne, E.; De. Gendt, S.; Iacovo, S. Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance. (2nd March 2023) Authors: Nagano, F.; Inoue, F.; Phommahaxay, A.; Peng, L.; Chancerel, F.; Naser, H.; Beyer, G.; Uedono, A.; Beyne, E.; De. Gendt, S.; Iacovo, S. Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance. (2nd March 2023) Authors: Nagano, F.; Inoue, F.; Phommahaxay, A.; Peng, L.; Chancerel, F.; Naser, H.; Beyer, G.; Uedono, A.; Beyne, E.; De. Gendt, S.; Iacovo, S. Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance. (2nd March 2023) Authors: Nagano, F.; Inoue, F.; Phommahaxay, A.; Peng, L.; Chancerel, F.; Naser, H.; Beyer, G.; Uedono, A.; Beyne, E.; De. Gendt, S.; Iacovo, S. Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗