1. A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects. (November 2020) Authors: Modolo, Nicola; Meneghini, Matteo; Barbato, Alessandro; Nardo, Arianna; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Sicre, Sebastien; Prechtl, Gerhard; Curatola, Gilberto Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs. (30th January 2020) Authors: Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Journal: Applied physics express Issue: Volume 13:Number 2(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy. (16th June 2021) Authors: Fregolent, Manuel; Buffolo, Matteo; De Santi, Carlo; Hasegawa, Sho; Matsumura, Junta; Nishinaka, Hiroyuki; Yoshimoto, Masahiro; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Journal: Journal of physics Issue: Volume 54:Number 34(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Defects and Reliability of GaN‐Based LEDs: Review and Perspectives. Issue 8 (24th February 2022) Authors: Buffolo, Matteo; Caria, Alessandro; Piva, Francesco; Roccato, Nicola; Casu, Claudia; De Santi, Carlo; Trivellin, Nicola; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Journal: Physica status solidi Issue: Volume 219:Issue 8(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Degradation Mechanisms of GaN‐Based Vertical Devices: A Review. Issue 7 (22nd January 2020) Authors: Meneghini, Matteo; Fabris, Elena; Ruzzarin, Maria; De Santi, Carlo; Nomoto, Kazuki; Hu, Zhenqi; Li, Wenshen; Gao, Xingya; Jena, Debdeep; Xing, Huili Grace; Sun, Min; Palacios, Tomas; Meneghesso, Gaudenzio; Zanoni, Enrico Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer. (28th September 2021) Authors: Roccato, Nicola; Piva, Francesco; De Santi, Carlo; Buffolo, Matteo; Haller, Camille; Carlin, Jean-François; Grandjean, Nicolas; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Journal: Journal of physics Issue: Volume 54:Number 50(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact. (November 2021) Authors: Bertoncello, Matteo; Barbato, Marco; Caria, Alessandro; Buffolo, Matteo; De Santi, Carlo; Rampino, Stefano; Vogrig, Daniele; Meneghesso, Gaudenzio; Meneghini, Matteo Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs. (9th April 2019) Authors: De Santi, Carlo; Buffolo, Matteo; Renso, Nicola; Neviani, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Journal: Applied physics express Issue: Volume 12:Number 5(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Evidence of optically induced degradation in gallium nitride optoelectronic devices. (12th October 2018) Authors: De Santi, Carlo; Caria, Alessandro; Renso, Nicola; Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Journal: Applied physics express Issue: Volume 11:Number 11(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results. Issue 24 (19th November 2022) Authors: Zanoni, Enrico; Rampazzo, Fabiana; De Santi, Carlo; Gao, Zhan; Sharma, Chandan; Modolo, Nicola; Verzellesi, Giovanni; Chini, Alessandro; Meneghesso, Gaudenzio; Meneghini, Matteo Journal: Physica status solidi Issue: Volume 219:Issue 24(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗