1. Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction. (15th September 2016) Authors: Reisinger, M.; Zalesak, J.; Daniel, R.; Tomberger, M.; Weiss, J.K.; Darbal, A.D.; Petrenec, M.; Zechner, J.; Daumiller, I.; Ecker, W.; Sartory, B.; Keckes, J. Journal: Materials & design Issue: Volume 106(2016) Page Start: 476 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction. (15th September 2016) Authors: Reisinger, M.; Zalesak, J.; Daniel, R.; Tomberger, M.; Weiss, J.K.; Darbal, A.D.; Petrenec, M.; Zechner, J.; Daumiller, I.; Ecker, W.; Sartory, B.; Keckes, J. Journal: Materials & design Issue: Volume 106(2016) Page Start: 476 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Matching in-situ and ex-situ recorded stress gradients in an AlxGa1 − xN Heterostructure: Complementary wafer curvature analyses in time and space. (1st April 2018) Authors: Reisinger, M.; Ostermaier, C.; Tomberger, M.; Zechner, J.; Sartory, B.; Ecker, W.; Daumiller, I.; Keckes, J. Journal: Scripta materialia Issue: Number 147(2018) Page Start: 50 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes. (November 2021) Authors: Nardo, A.; De Santi, C.; Koller, C.; Ostermaier, C.; Daumiller, I.; Meneghesso, G.; Zanoni, E.; Meneghini, M. Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗