Search

Author/Creator Daumiller, I.

1. Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction. (15th September 2016)

Authors:
Reisinger, M.; Zalesak, J.; Daniel, R.; Tomberger, M.; Weiss, J.K.; Darbal, A.D.; Petrenec, M.; Zechner, J.; Daumiller, I.; Ecker, W.; Sartory, B.; Keckes, J.
Journal:
Materials & design
Issue:
Volume 106(2016)
Page Start:
476
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

2. Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction. (15th September 2016)

Authors:
Reisinger, M.; Zalesak, J.; Daniel, R.; Tomberger, M.; Weiss, J.K.; Darbal, A.D.; Petrenec, M.; Zechner, J.; Daumiller, I.; Ecker, W.; Sartory, B.; Keckes, J.
Journal:
Materials & design
Issue:
Volume 106(2016)
Page Start:
476
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗