Author/Creator: Dassi, Minaxi - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Dassi, Minaxi

1. A novel source material engineered double gate tunnel field effect transistor for radio frequency integrated circuit applications. (9th September 2020)

Authors:: Dassi, Minaxi; Madan, Jaya; Pandey, Rahul; Sharma, Rajnish
Journal:: Semiconductor science and technology
Issue:: Volume 35:Number 10(2020)
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Record Type:: Journal Article
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2. Effect of temperature on analog performance of Mg2Si source heterojunction double gate tunnel field effect transistor. (2020)

Authors:: Dassi, Minaxi; Madan, Jaya; Pandey, Rahul; Sharma, Rajnish
Journal:: Materials today
Issue:: Volume 28:Part 3(2020)
Page Start:: 1520
Record Type:: Journal Article
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3. Erratum: A novel source material engineered double gate tunnel field effect transistor for radio frequency integrated circuit applications (2020 Semicond. Sci. Technol.35 129601). (19th October 2020)

Authors:: Dassi, Minaxi; Madan, Jaya; Pandey, Rahul; Sharma, Rajnish
Journal:: Semiconductor science and technology
Issue:: Volume 35:Number 12(2020)
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Record Type:: Journal Article
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4. Numerical analysis of Mg2Si/Si heterojunction DG-TFET for low power/high performance applications: Impact of non- idealities. (March 2020)

Authors:: Madan, Jaya; Dassi, Minaxi; Pandey, Rahul; Chaujar, Rishu; Sharma, Rajnish
Journal:: Superlattices and microstructures
Issue:: Volume 139(2020)
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Record Type:: Journal Article
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