1. An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces. Issue 14 (8th April 2019) Authors: Brière, Gauthier; Ni, Peinan; Héron, Sébastien; Chenot, Sébastien; Vézian, Stéphane; Brändli, Virginie; Damilano, Benjamin; Duboz, Jean‐Yves; Iwanaga, Masanobu; Genevet, Patrice Journal: Advanced optical materials Issue: Volume 7:Issue 14(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells. (25th April 2016) Authors: Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre; Damilano, Benjamin; Lekhal, Kaddour; De Mierry, Philippe Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors. (February 2022) Authors: Ngo, Thi Huong; Comyn, Rémi; Chenot, Sébastien; Brault, Julien; Damilano, Benjamin; Vézian, Stéphane; Frayssinet, Eric; Cozette, Flavien; Defrance, Nicolas; Lecourt, François; Labat, Nathalie; Maher, Hassan; Cordier, Yvon Journal: Solid-state electronics Issue: Volume 188(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Comparison of lasing characteristics of GaN microdisks with different structures. (1st September 2022) Authors: Zi, Hui; Fu, Wai Yuen; Cheung, Yuk Fai; Damilano, Benjamin; Frayssinet, Eric; Alloing, Blandine; Duboz, Jean-Yves; Boucaud, Philippe; Semond, Fabrice; Choi, Hoi Wai Journal: Journal of physics Issue: Volume 55:Number 35(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films. (23rd January 2017) Authors: Chan, Jay R.; Al Khalfioui, Mohamed; Vézian, Stéphane; Trodahl, Joe; Damilano, Benjamin; Natali, Franck Journal: MRS advances Issue: Volume 2:Number 3(2017) Page Start: 165 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Enhanced excitonic emission efficiency in porous GaN. Issue 1 (December 2018) Authors: Ngo, Thi; Gil, Bernard; Shubina, Tatiana; Damilano, Benjamin; Vezian, Stéphane; Valvin, Pierre; Massies, Jean Journal: Scientific reports Issue: Volume 8:Issue 1(2018) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy. (7th February 2017) Authors: Natali, Franck; Trodahl, Joe; Vézian, Stéphane; Traverson, Antoine; Damilano, Benjamin; Ruck, Ben Journal: MRS advances Issue: Volume 2:Number 3(2017) Page Start: 189 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Growth of nitride‐based light emitting diodes with a high‐reflectivity distributed Bragg reflector on mesa‐patterned silicon substrate. Issue 10 (14th July 2015) Authors: Damilano, Benjamin; Brochen, Stéphane; Brault, Julien; Hossain, Tasnia; Réveret, François; Frayssinet, Eric; Chenot, Sébastien; Courville, Aimeric; Cordier, Yvon; Semond, Fabrice Journal: Physica status solidi Issue: Volume 212:Issue 10(2015:Oct.) Page Start: 2297 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. High temperature electrical transport study of Si-doped AlN. (October 2016) Authors: Contreras, Sylvie; Konczewicz, Leszek; Ben Messaoud, Jaweb; Peyre, Hervé; Al Khalfioui, Mohamed; Matta, Samuel; Leroux, Mathieu; Damilano, Benjamin; Brault, Julien Journal: Superlattices and microstructures Issue: Volume 98(2016) Page Start: 253 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Influence of metal‐organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer. Issue 4 (16th November 2016) Authors: Frayssinet, Eric; Leclaire, Paul; Mohdad, Jad; Latrach, Soumaya; Chenot, Sébastien; Nemoz, Maud; Damilano, Benjamin; Cordier, Yvon Journal: Physica status solidi Issue: Volume 214:Issue 4(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗