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5. An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces. Issue 14 (8th April 2019)

7. Influence of metal‐organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer. Issue 4 (16th November 2016)

9. Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors. (February 2022)