1. Si‐based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm. Issue 11 (1st May 2015) Authors: Pham, T.N.; Du, W.; Conley, B.R.; Margetis, J.; Sun, G.; Soref, R.A.; Tolle, J.; Li, B.; Yu, S.‐Q. Journal: Electronics letters Issue: Volume 51:Issue 11(2015) Page Start: 854 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗