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Author/Creator Ciou, Fong-Min

1. Abnormal hump in low temperature in SiGe devices with silicon capping insertion layer. (30th July 2021)

Authors:
Huang, Wei-Chen; Chen, Po-Hsun; Lin, Chih-Yang; Zheng, Hao-Xuan; Chen, Hong-Chih; Ciou, Fong-Min; Tan, Yung-Fang; Chang, Kai-Chun; Lin, Yun-Hsuan; Chang, Yen-Cheng; Lin, Shih-Kai; Hung, Wei-Chun; Thio, Wesley; Chang, Ting-Chang
Journal:
Journal of physics
Issue:
Volume 54:Number 41(2021)
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Journal Article
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2. Abnormal trend in hot carrier degradation with fin profile in short channel FinFET devices at 14 nm node. (1st April 2022)

Authors:
Kuo, Ting-Tzu; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kai-Chun; Yeh, Chien-Hung; Ciou, Fong-Min; Lin, Yu-Shan; Lin, Yun-Hsuan; Jin, Fu-Yuan; Hung, Wei-Chun; Chang, Yen-Cheng; Chen, Kuan-Hsu; Lin, Jia-Hong
Journal:
Semiconductor science and technology
Issue:
Volume 37:Number 4(2022)
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Journal Article
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4. Investigating two-stage degradation of threshold voltage induced by off-state stress in AlGaN/GaN HEMTs. (7th January 2022)

Authors:
Lin, Yu-Shan; Chen, Yi-Lin; Chang, Ting-Chang; Ciou, Fong-Min; Zhu, Qing; Tai, Mao‐Chou; Su, Wan-Ching; Kuo, Ting-Tzu; Chen, Kuan-Hsu; Zhu, Jie-Jie; Mi, Min-Han; Ma, Xiao-Hua; Hao, Yue
Journal:
Semiconductor science and technology
Issue:
Volume 37:Number 2(2022)
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Journal Article
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5. Investigation of degradation behavior under negative bias temperature stress in Si/Si0.8Ge0.2 metal-oxide-semiconductor capacitors. (2nd September 2021)

Authors:
Chang, Yen-Cheng; Lin, Chien-Yu; Chang, Ting-Chang; Lin, Yun-Hsuan; Chen, Kuan-Hsu; Jin, Fu-Yuan; Lin, Yu-Shan; Ciou, Fong-Min; Chang, Kai-Chun; Hung, Wei-Chun; Kuo, Ting-Tzu; Yeh, Chien-Hung
Journal:
Journal of physics
Issue:
Volume 54:Number 47(2021)
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Journal Article
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6. Investigation of degradation mechanism after negative bias temperature stress in Si/SiGe channel metal–oxide–semiconductor capacitors induced by hydrogen diffusion. (10th December 2021)

Authors:
Ciou, Fong-Min; Chang, Yen-Cheng; Chen, Po-Hsun; Lin, Chien-Yu; Lin, Yun-Hsuan; Chen, Kuan-Hsu; Jin, Fu-Yuan; Lin, Yu-Shan; Hung, Wei-Chun; Chang, Kai-Chun; Kuo, Ting-Tzu; Yeh, Chien-Hung; Chang, Ting-Chang
Journal:
Semiconductor science and technology
Issue:
Volume 37:Number 1(2022)
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Journal Article
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7. Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors. (5th May 2021)

Authors:
Yeh, Yu-Hsuan; Chang, Ting-Chang; Huang, Wei-Chen; Zheng, Hao-Xuan; Tsao, Yu-Ching; Ciou, Fong-Min; Lin, Yu-Shan; Tan, Yung-Fang; Sun, Li-Chuan; Zhou, Kuan-Ju; Chen, Kuan-Hsu; Huang, Jen-Wei
Journal:
Journal of physics
Issue:
Volume 54:Number 28(2021)
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Journal Article
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8. Reliability enhancement in dipole-doped metal oxide semiconductor capacitor induced by low-temperature and high-pressure nitridation. (4th February 2021)

Authors:
Jin, Fu-Yuan; Ciou, Fong-Min; Hung, Wei-Chun; Huang, Jen-Wei; Lin, Chien-Yu; Lin, Yu-Shan; Chang, Kai-Chun; Chang, Yen-Cheng; Lin, Yun-Hsuan; Kuo, Ting-Tzu; Chen, Kuan-Hsu; Hung, Wei-Chieh; Yeh, Chien-Hung; Chang, Chin-Han; Chang, Ting-Chang
Journal:
Applied physics express
Issue:
Volume 14:Number 3(2021)
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Journal Article
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