Abnormal hump in low temperature in SiGe devices with silicon capping insertion layer. (30th July 2021)

• Record Type: Journal Article
• Authors: Huang, Wei-Chen; Chen, Po-Hsun; Lin, Chih-Yang; Zheng, Hao-Xuan; Chen, Hong-Chih; Ciou, Fong-Min; Tan, Yung-Fang; Chang, Kai-Chun; Lin, Yun-Hsuan; Chang, Yen-Cheng; Lin, Shih-Kai; Hung, Wei-Chun; Thio, Wesley; Chang, Ting-Chang
• Is Part Of: Journal of physics. Volume 54:Number 41(2021)
• Publication Date: 2021-07-30
• Subjects: silicon–germanium -- MOSCAP -- C–V characteristic -- capping layer -- TCAD simulation; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ac1373
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: This study compares the capacitance–voltage ( C – V ) characteristics in silicon–germanium (SiGe) metal-oxide-semiconductor capacitances with and without a silicon oxide capping layer. The SiGe channel with the silicon oxide capping layer exhibits an improved C – V property at room temperature but has an abnormal shift and depression at low temperature (77 K). We determined that the threshold voltage shift was induced by the Fermi-level when ambient temperature was changed. The additional silicon capping layer was responsible for introducing defects resulting in depression and hump in the C – V measurements. Such a phenomenon is mainly caused by the different distribution of defects, which was established by modifying the alternating current pulse amplitude during the C – V measurement.