1. (Invited) Investigations and Improvements of AlInN/GaN HEMTs Grown on Si. (13th April 2015) Authors: Chyi, Jen-Inn; Hsin, Yue-Ming; Lee, Geng-Yen; Chiu, Hsien-Chin Journal: ECS transactions Issue: Volume 66:Number 1(2015) Page Start: 217 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Preparation of GaSb Surface for Low Interfacial Trap Density MOS Capacitors. (10th April 2015) Authors: Chen, Chen-Yu; Hsueh, Wei-Jen; Chang, Chao-Min; Hsu, Hsien-Ming; Chyi, Jen-Inn Journal: ECS transactions Issue: Volume 66:Number 7(2015) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A Comprehensive Model for Whole Cell Sensing and Transmembrane Potential Measurement Using FET Biosensors. (1st January 2018) Authors: Pulikkathodi, Anil Kumar; Sarangadharan, Indu; Chen, Yi-Hong; Lee, Geng-Yen; Chyi, Jen-Inn; Lee, Gwo-Bin; Wang, Yu-Lin Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 7(2018) Page Start: Q3001 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. A Comprehensive Model for Whole Cell Sensing and Transmembrane Potential Measurement Using FET Biosensors. (7th February 2018) Authors: Pulikkathodi, Anil Kumar; Sarangadharan, Indu; Chen, Yi-Hong; Lee, Geng-Yen; Chyi, Jen-Inn; Lee, Gwo-Bin; Wang, Yu-Lin Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 7(2018) Page Start: Q3001 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Analysis of Threshold Voltage Shift in AlGaN/GaN Heterostructure Field-Effect Transistors with Different Buffer Layers. Issue 8 (14th May 2015) Authors: Liao, Wen-Chia; Chen, Cheng-Hsin; Hsu, Chia-Wei; Hsin, Yue-Ming; Chyi, Jen-Inn Journal: Journal of the Electrochemical Society Issue: Volume 162:Issue 8(2015) Page Start: H522 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Analysis of Threshold Voltage Shift in AlGaN/GaN Heterostructure Field-Effect Transistors with Different Buffer Layers. Issue 8 (1st January 2015) Authors: Liao, Wen-Chia; Chen, Cheng-Hsin; Hsu, Chia-Wei; Hsin, Yue-Ming; Chyi, Jen-Inn Journal: Journal of the Electrochemical Society Issue: Volume 162:Issue 8(2015) Page Start: H522 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Beyond the Limit of Ideal Nernst Sensitivity: Ultra-High Sensitivity of Heavy Metal Ion Detection with Ion-Selective High Electron Mobility Transistors. (11th September 2018) Authors: Chen, Yi-Ting; Hseih, Ching-Yen; Sarangadharan, Indu; Sukesan, Revathi; Lee, Geng-Yen; Chyi, Jen-Inn; Wang, Yu-Lin Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 9(2018) Page Start: Q176 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Beyond the Limit of Ideal Nernst Sensitivity: Ultra-High Sensitivity of Heavy Metal Ion Detection with Ion-Selective High Electron Mobility Transistors. (1st January 2018) Authors: Chen, Yi-Ting; Hseih, Ching-Yen; Sarangadharan, Indu; Sukesan, Revathi; Lee, Geng-Yen; Chyi, Jen-Inn; Wang, Yu-Lin Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 9(2018) Page Start: Q176 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Dynamic monitoring of transmembrane potential changes: a study of ion channels using an electrical double layer-gated FET biosensor. Issue 7 (28th February 2018) Authors: Pulikkathodi, Anil Kumar; Sarangadharan, Indu; Chen, Yi-Hong; Lee, Geng-Yen; Chyi, Jen-Inn; Lee, Gwo-Bin; Wang, Yu-Lin Journal: Lab on a chip Issue: Volume 18:Issue 7(2018) Page Start: 1047 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Enhancing the Performance of AlGaN/GaN Schottky Barrier Diodes by SF6 Plasma Treatment and Deep Anode Recess. (1st January 2017) Authors: Wang, Bo-Shiang; Lee, Geng-Yen; Yang, Chun-Chieh; Sanyal, Indraneel; Chyi, Jen-Inn Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 11(2017) Page Start: S3081 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗