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3. Characterization of a‐Se p–i–n junction fabricated using bidirectional electrolysis in NaCl(aq). Issue 10 (16th July 2015)

4. Cover Picture: High quantum efficiency UV detection using a‐Se based photodetector (Phys. Status Solidi RRL 7/2013). Issue 7 (15th July 2013)

6. Formation of p‐n Junction in a‐Se Thin Film and Its Application to High Sensitivity Photodetector Driven by Diamond Cold Cathode. Issue 11 (15th August 2017)

10. Influence of halide ions on the structure and properties of copper indium sulphide quantum dots. Issue 22 (24th February 2020)